PART |
Description |
Maker |
AT29LV010A-12TC AT29LV010A-12JI AT29LV010A-20JI AT |
120NS, TSOP, COM TEMP(FLASH) 128K X 8 FLASH 3V PROM, 120 ns, PDSO32 1-megabit (128K x 8) 3-volt Only Flash Memory
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Atmel, Corp. ATMEL Corporation
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TP28F010-90 TE28F010-150 |
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PDIP32 28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
|
Intel, Corp.
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AS29F010CW-12/883C AS29F010CW-6/IT |
128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY 128K X 8 FLASH 5V PROM, 120 ns, CDIP32 128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY 128K X 8 FLASH 5V PROM, 60 ns, CDIP32
|
Austin Semiconductor, Inc
|
UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting POT THUMBWHEEL 10K OHM LINEAR
|
Panasonic Semiconductor Panasonic Corporation
|
AT49BV2048 AT49LV2048 AT49LV2048A AT49LV2048A-70RC |
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage??Flash Memory 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 2兆位56 × 8/128K × 16)单2.7伏电池电压⑩闪存 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 3V PROM, 70 ns, PDSO44 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 120 ns, PDSO48 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage⑩ Flash Memory 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage?/a> Flash Memory
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 512K X 16 FLASH 3V PROM, 120 ns, PDSO44 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc. SPANSION LLC
|
CAT28F010TRI-70T CAT28F010N-90T CAT28F010P-15 CAT2 |
128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32 1 Megabit CMOS Flash Memory(79.65 k) 1兆位的CMOS快闪记忆体(79.65十一 x8 Flash EEPROM x8闪存EEPROM
|
Ironwood Electronics NXP Semiconductors N.V. Microchip Technology, Inc. ON SEMICONDUCTOR
|
AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
|
IS28F010-45PL IS28F010-45PLI IS28F010-45T IS28F010 |
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDSO32 131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PQCC32 131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDIP32
|
INTEGRATED SILICON SOLUTION INC Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
5962-9089909MUX MD28F010-12 |
128K X 8 FLASH 12V PROM, 90 ns, CDFP 128K X 8 FLASH 12V PROM, 120 ns, CDIP32
|
INTEL CORP
|
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